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Ak vaša poloha nie je na zozname, vyberte jednu z nasledujúcich možností:

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  1. Domov
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  5. K4A4G165WF-BCTD

Samsung Semiconductor - K4A4G165WF-BCTD

KEY Part #: K7359587

[26724ks skladom]

    Číslo dielu:
    K4A4G165WF-BCTD
    Výrobca:
    Samsung Semiconductor
    Detailný popis:
    4 Gb 256M x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.
    Štandardná dodacia lehota výrobcu:
    Skladom
    Skladovateľnosť:
    Jeden rok
    Čip z:
    Hong Kong
    RoHS:
    Spôsob platby:
    Spôsob prepravy:
    Rodinné kategórie:
    KEY Components Co, LTD je distribútor elektronických komponentov, ktorý ponúka kategórie výrobkov vrátane: MODULE, LPDDR3, SLC Nand, LPDDR4X, DDR3, GDDR5, LPDDR5 and HBM Flarebolt ...
    Konkurenčná výhoda:
    We specialize in Samsung Semiconductor K4A4G165WF-BCTD electronic components. K4A4G165WF-BCTD can be shipped within 24 hours after order. If you have any demands for K4A4G165WF-BCTD, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A4G165WF-BCTD Atribúty produktu

    Číslo dielu : K4A4G165WF-BCTD
    Výrobca : Samsung Semiconductor
    popis : 4 Gb 256M x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production
    séria : DDR4
    Hustota : 4 Gb
    Org. : 256M x 16
    rýchlosť : 2666 Mbps
    Napätie : 1.2 V
    Temp. : 0 ~ 85 °C
    balíček : 96FBGA
    stav produkt : Mass Production

    Najnovšie správy

    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Z-SSD SZ985
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Evolving Mobile Solutions: Samsung at MWC 2018
    Automotive Driven by Small Packages Under the Hood
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Bringing Artificial Intelligence to Devices Everywhere
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
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