Samsung Semiconductor - K4A8G085WC-BITD

KEY Part #: K7359604

[23945ks skladom]

Číslo dielu:: K4A8G085WC-BITD

Výrobca:: Samsung Semiconductor

Detailný popis:: 8 Gb 1G x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

Štandardná dodacia lehota výrobcu:: Skladom

Skladovateľnosť:: Jeden rok

Čip z:: Hong Kong

RoHS:

Spôsob platby:

Spôsob prepravy:

Rodinné kategórie:: KEY Components Co, LTD je distribútor elektronických komponentov, ktorý ponúka kategórie výrobkov vrátane: MODULE, DDR4, LPDDR3, HBM Flarebolt, DDR3, GDDR6, SLC Nand and LPDDR4X ...

Konkurenčná výhoda:: We specialize in Samsung Semiconductor K4A8G085WC-BITD electronic components. K4A8G085WC-BITD can be shipped within 24 hours after order. If you have any demands for K4A8G085WC-BITD, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

K4A8G085WC-BITD Atribúty produktu

Číslo dielu : K4A8G085WC-BITD

Výrobca : Samsung Semiconductor

popis : 8 Gb 1G x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production

séria : DDR4

Hustota : 8 Gb

Org. : 1G x 8

rýchlosť : 2666 Mbps

Napätie : 1.2 V

Temp. : -40 ~ 95 °C

balíček : 78FBGA

stav produkt : Mass Production

Najnovšie správy

Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering

SSDs, DRAM and gaming: Unlocking a new level of performance

Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology

Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology

5G and Memory - from Connected Thinking to Connected Living

High Bandwidth Memory is Catching on for Data-intensive Computing

An Exclusive Look Inside Samsung’s Memory Exhibit at MWC

Speed for the next generation of mobile devices

Automotive Driven by Small Packages Under the Hood

Driving the Artificial Intelligence Evolution with In-Memory Computing

Mission Peak Reference Server System for NGSFF SSD

Bringing Artificial Intelligence to Devices Everywhere

Môže vás tiež zaujímať

K4A4G085WE-BIRC

Samsung Semiconductor

4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.
K4ABG165WA-MCWE

Samsung Semiconductor

32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.
K4A4G085WE-BITD

Samsung Semiconductor

4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.
K4A4G085WF-BCTD

Samsung Semiconductor

4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.
K4A4G085WF-BITD

Samsung Semiconductor

4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.
K4A4G165WE-BCWE

Samsung Semiconductor

4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

English Slovenská