Ak vaša poloha nie je na zozname, vyberte jednu z nasledujúcich možností:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski

Ak vaša poloha nie je na zozname, vyberte jednu z nasledujúcich možností:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Domov
  2. Produkty
  3. DRAM
  4. DDR3
  5. K4B2G0846F-BYK0

Samsung Semiconductor - K4B2G0846F-BYK0

KEY Part #: K7359654

[25337ks skladom]

    Číslo dielu:
    K4B2G0846F-BYK0
    Výrobca:
    Samsung Semiconductor
    Detailný popis:
    2 Gb 256M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.
    Štandardná dodacia lehota výrobcu:
    Skladom
    Skladovateľnosť:
    Jeden rok
    Čip z:
    Hong Kong
    RoHS:
    Spôsob platby:
    Spôsob prepravy:
    Rodinné kategórie:
    KEY Components Co, LTD je distribútor elektronických komponentov, ktorý ponúka kategórie výrobkov vrátane: GDDR5, SLC Nand, GDDR6, MODULE, HBM Aquabolt, LPDDR5, DDR4 and HBM Flarebolt ...
    Konkurenčná výhoda:
    We specialize in Samsung Semiconductor K4B2G0846F-BYK0 electronic components. K4B2G0846F-BYK0 can be shipped within 24 hours after order. If you have any demands for K4B2G0846F-BYK0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B2G0846F-BYK0 Atribúty produktu

    Číslo dielu : K4B2G0846F-BYK0
    Výrobca : Samsung Semiconductor
    popis : 2 Gb 256M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production
    séria : DDR3
    Hustota : 2 Gb
    Org. : 256M x 8
    rýchlosť : 1600 Mbps
    Napätie : 1.35 V
    Temp. : 0 ~ 85 °C
    balíček : 78FBGA
    stav produkt : Mass Production

    Najnovšie správy

    Mass Production of Fifth-Generation V-NAND has Started
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Automotive Driven by Small Packages Under the Hood
    Mission Peak Reference Server System for NGSFF SSD
    Môže vás tiež zaujímať
    • K3UH5H50AM-AGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    • K3UH5H50AM-EGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH5H50AM-JGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 432FBGA Mass Production.

    • K3UH6H60BM-AGCL

      Samsung Semiconductor

      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    • K3UH6H60BM-EGCL

      Samsung Semiconductor

      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH7H70AM-AGCL

      Samsung Semiconductor

      64 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    Horúce časti